mbr1090ct, MBR10100CT vishay general semiconductor document number: 89125 revision: 26-apr-10 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 1 new product dual common-cathode high voltage schottky rectifier features ? trench mos schottky technology ? lower power losses, high efficiency ? low forward voltage drop ? high forward surge capability ? high frequency operation ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in high frequency re ctifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application mechanical data case: to-220ab molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs comp liant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 5.0 a v rrm 90 v, 100 v i fsm 120 a v f 0.75 v t j max. 150 c to-220ab case pin 2 pin 1 pin 3 1 2 3 tmbs ? maximum ratings (t c = 25 c unless otherwise noted) parameter symbol mbr1090ct MBR10100CT unit maximum repetitive peak reverse voltage v rrm 90 100 v working peak reverse voltage v rwm 90 100 v maximum dc blocking voltage v dc 90 100 v maximum average forward rectified current at t c = 105 c total device per diode i f(av) 10 5.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 120 a non-repetitive avalanche energy at t j = 25 c, l = 60 mh per diode e as 60 mj peak repetitive reverse current at t p = 2 s, 1 khz, t j = 38 c 2 c per diode i rrm 0.5 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 65 to + 150 c
new product mbr1090ct, MBR10100CT vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 89125 revision: 26-apr-10 2 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t c = 25 c unless otherwise noted) parameter test conditions symbol mbr1090ct MBR10100CT unit maximum instantaneous forward voltage per diode (1) i f = 5.0 a i f = 5.0 a t c = 125 c t c = 25 c v f 0.75 0.85 v maximum reverse current per diode at working peak reverse voltage (2) t j = 25 c t j = 100 c i r 100 6.0 a ma thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol mbr1090ct MBR10100CT unit typical thermal resistance per diode r jc 4.4 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-220ab MBR10100CT-e3/4w 1.87 4w 50/tube tube figure 1. forward current derating curve 0 2 4 6 10 0 50 100 150 8 resisti v e or ind u cti v e load a v erage for w ard c u rrent (a) case temperat u re (c) figure 2. maximum non-repetitive peak forward surge current per diode 0 20 60 40 100 8 0 120 1 100 10 t j = t j max. 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
new product mbr1090ct, MBR10100CT vishay general semiconductor document number: 89125 revision: 26-apr-10 for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 3 figure 3. forward power loss characteristics per diode figure 4. typical instantaneous forw ard characteristics per diode figure 5. typical reverse characteristics per diode 01 56 2 4.0 3.5 3.0 2.5 1.0 0.5 0 2.0 1.5 34 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = 0.1 d = 0.2 d = 0.3 d = 0. 8 d = 0.5 d = 1.0 d = t p /t t p t 0 0.2 1.6 0.4 100 10 0.1 1 0.6 0. 8 1.0 1.2 1.4 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t a = 150 c t a = 125 c t a = 100 c t a = 25 c 0.01 0.001 0.1 1 10 100 0.0001 20 0 100 40 60 8 0 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma) t a = 150 c t a = 125 c t a = 100 c t a = 25 c figure 6. typical juncti on capacitance per diode figure 7. typical transient thermal impedance per diode 10 1 100 100 1000 10 000 0.1 10 re v erse v oltage ( v ) j u nction capaci tance (pf) t j = 25 c f = 1 mhz v sig = 50 m v p-p 0.01 10 100 1 10 0.1 0.1 t - p u lse d u ration (s) transient thermal impedance (c/ w ) j u nction to case
new product mbr1090ct, MBR10100CT vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number: 89125 revision: 26-apr-10 4 package outline dimensions in inches (millimeters) to-220ab 0.113 (2. 8 7) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15. 8 7) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.02 8 (0.70) 0.154 (3.91) 0.14 8 (3.74) 1 3 2 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55)
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